RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE

被引:23
作者
BSIESY, A
MULLER, F
LIGEON, M
GASPARD, F
HERINO, R
ROMESTAIN, R
VIAL, JC
机构
[1] Laboratoire de Spectrométrie Physique Associé Au CNRS (URA 08), Université Joseph Fourier de Grenoble, 38402-Saint Martin d'Heres Cedex
关键词
D O I
10.1063/1.112395
中图分类号
O59 [应用物理学];
学科分类号
摘要
The voltage-tunable electroluminescence (VTEL) observed on porous silicon-electrolyte system is investigated in relation with the material photoluminescence (PL). It is shown that the PL line is the envelope of all the emitted EL spectra obtained upon the bias variation. Consequently, a blueshift of the (PL) line leads to a similar shift of all the corresponding EL lines. This strongly suggests a common origin of these two phenomenon. Moreover, this study seems to indicate that the VTEL of porous silicon is related to the size and efficiency distributions of the silicon nanocrystallites associated with an electrically induced selective carrier injection. © 1994 American Institute of Physics.
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页码:3371 / 3373
页数:3
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