POROUS SILICON - QUANTUM SPONGE STRUCTURES GROWN VIA A SELF-ADJUSTING ETCHING PROCESS

被引:80
作者
LEHMANN, V [1 ]
GOSELE, U [1 ]
机构
[1] DUKE UNIV,SCH ENGN,DURHAM,NC 27706
关键词
D O I
10.1002/adma.19920040212
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Research News: Electroluminescence in porous silicon at room temperature has recently been achieved. This is a crucial step in the realization of silicon-based optoelectronic devices but there is still work to be done, for example in improving the stability of the electroluminescence. The materials, the effect, and the potential of the materials in the study of quantum confinement effects in silicon sponges (see figure) are discussed.
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收藏
页码:114 / 116
页数:3
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