TE/TM MODE SELECTIVE CHANNEL WAVEGUIDES IN GAAS/ALAS SUPERLATTICE FABRICATED BY SIO2 CAP DISORDERING

被引:29
作者
SUZUKI, Y
IWAMURA, H
MIKAMI, O
机构
[1] NTT Opto-Electronics Laboratories, Atsugi-shi, Kanagawa Pref. 243-01
关键词
D O I
10.1063/1.103274
中图分类号
O59 [应用物理学];
学科分类号
摘要
Novel structure TE/TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption edge of the as-grown SL. By observing the near-field patterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light.
引用
收藏
页码:19 / 20
页数:2
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