ROOM-TEMPERATURE EXCITON-TRANSITIONS IN PARTIALLY INTERMIXED GAAS/ALGAAS SUPERLATTICES

被引：98

作者：

RALSTON, JD ^{[1
]}

OBRIEN, S ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 18期

关键词：

D O I：

10.1063/1.99115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1511 / 1513

页数：3

共 21 条

[1] CALCULATION OF TRANSMISSION TUNNELING CURRENT ACROSS ARBITRARY POTENTIAL BARRIERS [J].

ANDO, Y ;

ITOH, T .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) :1497-1502

[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[3] KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].

CIBERT, J ;

PETROFF, PM ;

WERDER, DJ ;

PEARTON, SJ ;

GOSSARD, AC ;

ENGLISH, JH .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225

[4] PHOTOCURRENT SPECTROSCOPY OF GAAS/ALXGA1-XAS QUANTUM-WELLS IN AN ELECTRIC-FIELD [J].

COLLINS, RT ;

VONKLITZING, K ;

PLOOG, K .

PHYSICAL REVIEW B, 1986, 33 (06) :4378-4381

[5] STRIPE-GEOMETRY QUANTUM-WELL HETEROSTRUCTURE ALXGA1-XAS-GAAS LASERS DEFINED BY DEFECT DIFFUSION [J].

DEPPE, DG ;

GUIDO, LJ ;

HOLONYAK, N ;

HSIEH, KC ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL .

APPLIED PHYSICS LETTERS, 1986, 49 (09) :510-512

[6] LASER-INDUCED DISORDERING OF GAAS-ALGAAS SUPERLATTICE AND INCORPORATION OF SI IMPURITY [J].

EPLER, JE ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL ;

BASHAW, MC .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1447-1449

[7] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J].

GAVRILOVIC, P ;

DEPPE, DG ;

MEEHAN, K ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :130-132

[8] SI-SI PAIR DIFFUSION AND CORRELATION IN ALXGA1-XAS AND GAAS [J].

GAVRILOVIC, P ;

GAVRILOVIC, J ;

MEEHAN, K ;

KALISKI, RW ;

GUIDO, LJ ;

HOLONYAK, N ;

HESS, K ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :710-712

[9] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[10]

GREINER ME, 1984, THESIS STANFORD U

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