SI-SI PAIR DIFFUSION AND CORRELATION IN ALXGA1-XAS AND GAAS

被引：4

作者：

GAVRILOVIC, P

GAVRILOVIC, J

MEEHAN, K

KALISKI, RW

GUIDO, LJ

HOLONYAK, N

HESS, K

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.96067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：710 / 712

页数：3

共 16 条

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HIGH, DA .

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[4]

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[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

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[6] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

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DAPKUS, PD .

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[7]

HOLONYAK N, 1983, Patent No. 4378255

[8]

HOLONYAK N, 1985, SOV PHYS SEMICOND, V19

[9]

KAHN C, 1957, PHYS REV, V108, P965

[10] PHOTOLUMINESCENCE AND STIMULATED-EMISSION IN SI-DISORDERED AND GE-DISORDERED ALX GA1-X AS-GAAS SUPERLATTICES [J].

KALISKI, RW ;

GAVRILOVIC, P ;

MEEHAN, K ;

GAVRILOVIC, J ;

HSIEH, KC ;

JACKSON, GS ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD ;

THORNTON, RL ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :101-107

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