NOISE ASSOCIATED WITH SUBSTRATE CURRENT IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS

被引：18

作者：

JINDAL, RP

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1985.22072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1047 / 1052

页数：6

共 12 条

BURGESS, RE .

DISCUSSIONS OF THE FARADAY SOCIETY, 1959, (28) :151-158

[2]

CHAN N, 1984, 42ND DRC

[3]

JINDAL RP, 1984, 42ND DRC

[4] ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON [J].

KANE, EO .

PHYSICAL REVIEW, 1967, 159 (03) :624-&

[5]

KIM CS, 1971, THESIS U FLORIDA

LUKASZEK, WA ;

VANDERZIEL, A ;

CHENETTE, ER .

[7]

Matsunaga J., 1980, International Electron Devices Meeting. Technical Digest, P736

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

[9]

Rucker L. M., 1978, Solid-State Electronics, V21, P798, DOI 10.1016/0038-1101(78)90017-5

[10]

TAGER AS, 1965, FIZ TVERD TELA+, V6, P1919