SIMPLE TECHNIQUE FOR MEASURING CAVITY LOSS IN SEMICONDUCTOR-LASERS

被引：15

作者：

KETELSEN, LJP

机构：

[1] AT&T Bell Laboratories, Murray Hill, NJ 07974

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 17期

关键词：

SEMICONDUCTOR JUNCTION LASERS; LASER CAVITY RESONATORS; LASER VARIABLES MEASUREMENT;

D O I：

10.1049/el:19940930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for measuring the cavity loss of semiconductor lasers is introduced. The cavity loss is deduced from the Fabry-Perot oscillations in the spontaneous emission well below the bandgap of the active region. This approach, referred to as the below-bandgap technique, is simple, applicable to both Fabry-Perot and DFB lasers, and is capable of measuring cavity losses with few restrictions on laser bias current.

引用

页码：1422 / 1424

页数：3