LOW REGROWTH-INTERFACE RECOMBINATION RATES IN INGAAS-GAAS BURIED RIDGE LASERS FABRICATED BY IN-SITU PROCESSING

We report the use of low damage dry etching and in situ molecular beam epitaxial (MBE) regrowth in creating high-quality regrown interfaces. By fabricating buried, etched ridge InGaAs/GaAs lasers, we are able to measure the interface recombination portion of the threshold current and extract the interface recombination velocity. We find that a two-part etching process composed of ion beam assisted etching and chlorine gas etching, followed by in situ MBE regrowth, results in a very low interface recombination velocity of 3×103 cm/s.© 1995 American Institute of Physics.