ON VOLTAGE INDUCED BY AN ELECTRON BEAM IN A BULK SEMICONDUCTOR CRYSTAL

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MUNAKATA, C
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10.1143/JJAP.5.756
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O59 [应用物理学];
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[1]  
Frank H., 1956, CZECH J PHYS, V6, P433
[2]   THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J].
GOUCHER, FS ;
PEARSON, GL ;
SPARKS, M ;
TEAL, GK ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1951, 81 (04) :637-638
[3]  
Institute of technical Physics, 1955, CZECH J PHYS, V5, P178
[4]  
LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P358
[6]   BULK ELECTRON VOLTAIC EFFECT [J].
MUNAKATA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (09) :697-&
[7]   MEASUREMENT OF HOMOGENITY OF A SEMICONDUCTOR WITH AN ELECTRON BEAM [J].
MUNAKATA, C .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (10) :815-&
[8]   A METHOD OF MEASURING LIFETIME FOR MINORITY CARRIERS INDUCED BY AN ELECTRON BEAM IN GERMANIUM [J].
MUNAKATA, C ;
TODOKORO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (03) :249-+
[9]  
SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P314
[10]  
SCHOKLEY W, 1950, ELECTRONS HOLES SEMI, P300