A 100 GHZ SIS MIXER OF NB/A1-A10X/NB JUNCTIONS

被引:11
作者
INATANI, J [1 ]
KASUGA, T [1 ]
SAKAMOTO, A [1 ]
IWASHITA, H [1 ]
KODAIRA, S [1 ]
机构
[1] KISARAZU TECH COLL,KISARAZU,CHIBA 292,JAPAN
关键词
D O I
10.1109/TMAG.1987.1065164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1263 / 1266
页数:4
相关论文
共 5 条
[1]  
BARRY J, 1986, MICROWAVES RF, V25, P171
[2]   AN SIS MIXER FOR 90-120 GHZ WITH GAIN AND WIDE BANDWIDTH [J].
DADDARIO, LR .
INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1984, 5 (11) :1419-1442
[3]   HIGH-QUALITY REFRACTORY JOSEPHSON TUNNEL-JUNCTIONS UTILIZING THIN ALUMINUM LAYERS [J].
GURVITCH, M ;
WASHINGTON, MA ;
HUGGINS, HA .
APPLIED PHYSICS LETTERS, 1983, 42 (05) :472-474
[4]   NEW FABRICATION PROCESS FOR JOSEPHSON TUNNEL-JUNCTIONS WITH (NIOBIUM NITRIDE, NIOBIUM) DOUBLE-LAYERED ELECTRODES [J].
SHOJI, A ;
SHINOKI, F ;
KOSAKA, S ;
AOYAGI, M ;
HAYAKAWA, H .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1097-1099
[5]   ULTRA-LOW-NOISE 1.2- TO 1.7-GHZ COOLED GAASFET AMPLIFIERS [J].
WEINREB, S ;
FENSTERMACHER, DL ;
HARRIS, RW .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (06) :849-853