NEW FABRICATION PROCESS FOR JOSEPHSON TUNNEL-JUNCTIONS WITH (NIOBIUM NITRIDE, NIOBIUM) DOUBLE-LAYERED ELECTRODES

被引：46

作者：

SHOJI, A

SHINOKI, F

KOSAKA, S

AOYAGI, M

HAYAKAWA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 11期

关键词：

D O I：

10.1063/1.93378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1097 / 1099

页数：3

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[8] JOSEPHSON TUNNEL-JUNCTIONS WITH NB, NBN DOUBLE-LAYERED ELECTRODES
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