NIOBIUM JOSEPHSON JUNCTIONS WITH DOPED AMORPHOUS SILICON BARRIERS

被引：26

作者：

KROGER, H

POTTER, CN

JILLIE, DW

机构：

[1] Sperry Research Center, Sudbury

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1979年 / 15卷 / 01期

关键词：

D O I：

10.1109/TMAG.1979.1060117

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nb-(a-Si)-Nb Josephson devices have been prepared by rf sputtering* The silicon films were deposited in an argon-hydrogen atmosphere. Such films can be activated as either n-or p-type.semiconductors by the incorporation of phosphorus or boron, and the Fermi level of the material can be moved a considerable fraction of the bandgap. The Josephson current density of n-type layers is found to be substantially greater than p-type layers of the same thickness. © 1979 IEEE

引用

收藏

页码：488 / 489

页数：2

相关论文

共 10 条

[1] TUNNELING BETWEEN SUPERCONDUCTORS [J].

AMBEGAOKAR, V ;

BARATOFF, A .

PHYSICAL REVIEW LETTERS, 1963, 10 (11) :486-&

[2]

BROOM RF, 1975, 14 P INT C LOW TEMP, V4, P172

[3] USE OF LOW BARRIER POTENTIAL MATERIALS TO IMPROVE HIGH-FREQUENCY COUPLING TO JOSEPHSON TUNNEL-JUNCTIONS [J].

CARDINNE, P ;

NORDMAN, J ;

RENARD, M .

REVUE DE PHYSIQUE APPLIQUEE, 1974, 9 (01) :167-171

[4]

HARRIS RE, 1978, 44 AIP C P, P448

[5] SCHOTTKY DIODES AND OTHER DEVICES ON THIN SILICON MEMBRANES [J].

HUANG, CL ;

VANDUZER, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) :579-583

[6] ALL-REFRACTORY WEAK-LINK SQUIDS FOR USE IN JOSEPHSON LOGIC AND MEMORY APPLICATIONS [J].

JILLIE, DW ;

KROGER, H .

IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) :486-487

[7] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J].

PAUL, W ;

LEWIS, AJ ;

CONNELL, GAN ;

MOUSTAKAS, TD .

SOLID STATE COMMUNICATIONS, 1976, 20 (10) :969-972

[8]

POTTER CN, UNPUBLISHED

[9] GENERALIZED FORMULA FOR ELECTRIC TUNNEL EFFECT BETWEEN SIMILAR ELECTRODES SEPARATED BY A THIN INSULATING FILM [J].

SIMMONS, JG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1793-&

[10] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949