SCHOTTKY DIODES AND OTHER DEVICES ON THIN SILICON MEMBRANES

被引：32

作者：

HUANG, CL

VANDUZER, T

机构：

[1] HEWLETT PACKARD CO, DIV MICROWAVE SEMICOND, PALO ALTO, CA USA

[2] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[3] UNIV CALIF BERKELEY, ELECTR RES INST, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/T-ED.1976.18455

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 583

页数：5

共 18 条

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BOHG, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :401-&

[2]

CHANG THP, 1974, 6TH EL ION BEAM SCI, P580

[3]

DECKER DR, 1969, MICROWAVE SEMICONDUC, pCH7

[4] PREPARATION OF THIN SILICON CRYSTALS BY ELECTROCHEMICAL THINNING OF EPITAXIALLY GROWN STRUCTURES [J].

DIJK, HJAV ;

JONGE, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (04) :553-&

[5] A WATER-AMINE-COMPLEXING AGENT SYSTEM FOR ETCHING SILICON [J].

FINNE, RM ;

KLEIN, DL .

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[6] DENSITOMETRIC AND ELECTRICAL INVESTIGATION OF BORON IN SILICON [J].

HORN, FH .

PHYSICAL REVIEW, 1955, 97 (06) :1521-1525

[7] SINGLE-CRYSTAL SILICON-BARRIER JOSEPHSON JUNCTIONS [J].

HUANG, CL ;

VANDUZER, T .

IEEE TRANSACTIONS ON MAGNETICS, 1975, MA11 (02) :766-769

[8] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS [J].

HUANG, CL ;

VANDUZER, T .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :753-756

[9]

IRVIN JC, 1969, MICROWAVE SEMICONDUC, pCH11

[10]

JEWETT RE, 1974, 6TH P INT C EL ION B, P49

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