TUNNELING CHARACTERISTICS OF NBN-NBN JOSEPHSON-JUNCTIONS WITH GLOW-DISCHARGE-PRODUCED AMORPHOUS-SILICON BARRIERS

被引：20

作者：

SHOJI, A

SHINOKI, F

KOSAKA, S

HAYAKAWA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 08期

关键词：

D O I：

10.1143/JJAP.20.L587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L587 / L590

页数：4

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