FABRICATION OF NBN-PB JOSEPHSON TUNNEL-JUNCTIONS WITH A NOVEL INTEGRATION METHOD

被引:21
作者
KOSAKA, S
SHINOKI, F
TAKADA, S
HAYAKAWA, H
机构
关键词
D O I
10.1109/TMAG.1981.1060972
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:314 / 317
页数:4
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共 13 条
  • [1] TUNNELING BETWEEN SUPERCONDUCTORS
    AMBEGAOKAR, V
    BARATOFF, A
    [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 486 - &
  • [2] CAPACITANCE AND ELLIPSOMETRICALLY DETERMINED OXIDE THICKNESS OF NB-OXIDE-PB JOSEPHSON TUNNEL-JUNCTIONS
    BASAVAIAH, S
    GREINER, JH
    [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4201 - 4202
  • [3] BASAVAIAH S, 1980, J APPL PHYS, V48, P4630
  • [4] FABRICATION AND PROPERTIES OF NIOBIUM JOSEPHSON TUNNEL-JUNCTIONS
    BROOM, RF
    LAIBOWITZ, RB
    MOHR, TO
    WALTER, W
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (02) : 212 - 222
  • [5] GREINER JH, 1974, J APPL PHYS, V45, P32, DOI 10.1063/1.1662979
  • [6] GREINER JH, 1974, J VAC SCI TECHNOL, V11, P81, DOI 10.1116/1.1318666
  • [7] SINGLE FLUX-QUANTUM MEMORY CELLS
    GUERET, P
    MOHR, TO
    WOLF, P
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1977, 13 (01) : 52 - 55
  • [8] JOSEPHSON PROPERTIES OF NB3SN-PB TUNNEL-JUNCTIONS
    HOWARD, RE
    RUDMAN, DA
    BEASLEY, MR
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 671 - 673
  • [9] NIOBIUM JOSEPHSON JUNCTIONS WITH DOPED AMORPHOUS SILICON BARRIERS
    KROGER, H
    POTTER, CN
    JILLIE, DW
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1979, 15 (01) : 488 - 489
  • [10] LEAD ALLOY JOSEPHSON-JUNCTIONS WITH PB-BI COUNTERELECTRODES
    LAHIRI, SK
    BASAVAIAH, S
    KIRCHER, CJ
    [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 334 - 336