ANOMALOUS VOLTAGE DEPENDENCE OF TUNNELLING MICROSCOPY IN WSE2

被引:25
作者
AKARI, S
STACHEL, M
BIRK, H
SCHRECK, E
LUX, M
DRANSFELD, K
机构
来源
JOURNAL OF MICROSCOPY-OXFORD | 1988年 / 152卷
关键词
D O I
10.1111/j.1365-2818.1988.tb01416.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
引用
收藏
页码:521 / 526
页数:6
相关论文
共 6 条
  • [1] ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .2. THE NATURE OF THE OPTICAL BAND-GAPS
    COEHOORN, R
    HAAS, C
    DEGROOT, RA
    [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6203 - 6206
  • [2] ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY
    COEHOORN, R
    HAAS, C
    DIJKSTRA, J
    FLIPSE, CJF
    DEGROOT, RA
    WOLD, A
    [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6195 - 6202
  • [3] SCHNEIR J, 1987, APPL PHYS LETT, V50, P1742
  • [4] IMAGING OF MOS2 BY SCANNING TUNNELING MICROSCOPY
    STUPIAN, GW
    LEUNG, MS
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1560 - 1562
  • [5] TRIBUTSCH H, 1977, Z NATURFORSCH A, V32, P972
  • [6] TRANSITION METAL DICHALCOGENIDES DISCUSSION AND INTERPRETATION OF OBSERVED OPTICAL, ELECTRICAL AND STRUCTURAL PROPERTIES
    WILSON, JA
    YOFFE, AD
    [J]. ADVANCES IN PHYSICS, 1969, 18 (73) : 193 - +