POSITRON MOBILITY IN SOME SOLID INSULATORS AT ROOM-TEMPERATURE

被引：19

作者：

MACKENZIE, IK

GHORAYSHI, PZ

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(85)90262-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：125 / 127

页数：3

共 11 条

[1] SUBEXCITATION POSITRONS [J].

BRANDT, W ;

FEIBUS, H .

PHYSICAL REVIEW, 1969, 184 (02) :277-&

[2]

BRANDT W, 1979, B AM PHYS SOC, V24, P72

[3]

HEINRICH F, 1982, 6TH P INT C POS ANN, P705

[4] TRAPPING OF POSITRONS AT VACANCIES IN METALS [J].

HODGES, CH .

[5]

LINDEROTH S, COMMUNICATION

[6]

LYNN KG, 1983, 83 P INT SCH PHYS EN, P609

[7] MEASUREMENT OF MOBILITY OF POSITRONS IN GERMANIUM [J].

MILLS, AP ;

PFEIFFER, L .

[8] MOBILITY OF POSITRONS IN SILICON [J].

MILLS, AP ;

PFEIFFER, L .

[9] SPUR REACTION MODEL OF POSITRONIUM FORMATION [J].

MORGENSEN, OE .

[10]

NIEMINEN RM, 1983, 83 P INT SCH PHYS E, P359