CONTACTLESS ELECTROREFLECTANCE STUDY OF TEMPERATURE-DEPENDENCE OF FUNDAMENTAL-BAND GAP OF ZNSE

被引:3
作者
KRYSTEK, W
MALIKOVA, L
POLLAK, FH
TAMARGO, MC
DAI, N
ZENG, L
CAVUS, A
机构
[1] CUNY BROOKLYN COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,BROOKLYN,NY 11210
[2] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031
[3] CUNY CITY COLL,NEW YORK STATE CTR ADV TECHNOL ULTRAFAST PHOTON M,NEW YORK,NY 10031
关键词
D O I
10.12693/APhysPolA.88.1013
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report a systematic study of the temperature variation of the energy [E(0)(T)] and broadening parameter [Gamma(0)(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E(0)(T) and Gamma(0)(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E(0)(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.
引用
收藏
页码:1013 / 1017
页数:5
相关论文
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[11]   THE TEMPERATURE-DEPENDENCE OF THE BAND-GAPS IN INP, INAS, INSB, AND GASB [J].
ZOLLNER, S ;
GOPALAN, S ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1991, 77 (07) :485-488