CURRENT MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS

[1] SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05): : 551 - 559

[2] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[3] PHILLIPS AB, 1962, TRANSISTOR ENGINEERI, P208

[4] PHILLIPS AB, 1962, TRANSISTOR ENGINEERI, P217

[5] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[6] SHOCKLEY W, 1958, P IRE, V46, P1947

[1] SOME ASPECTS OF THE DESIGN OF POWER TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1955, 43 (05): : 551 - 559

[2] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[3] PHILLIPS AB, 1962, TRANSISTOR ENGINEERI, P208

[4] PHILLIPS AB, 1962, TRANSISTOR ENGINEERI, P217

[5] MOBILITY OF HOLES AND ELECTRONS IN HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1953, 90 (05): : 766 - 769

[6] SHOCKLEY W, 1958, P IRE, V46, P1947