ION-IMPLANTED N-TYPE CONTACT FOR HIGH-PURITY GERMANIUM RADIATION DETECTORS

被引：23

作者：

HUBBARD, GS ^{[1
]}

HALLER, EE ^{[1
]}

HANSEN, WL ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DEPT ELECTR ENGN,BERKELEY,CA 94720

来源：

关键词：

D O I：

10.1109/TNS.1977.4328661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：161 / 164

页数：4

共 12 条

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BAERTSCH, RD ;

HALL, RN .

[2]

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[3]

CSEPREGI L, COMMUNICATION

[4]

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[5]

GLOWINSKI LD, 1976, APPL PHYS LETT, V28, P15

[6]

HERZER H, 1971, 2 P INT C ION IMPL S

[7] FAST-NEUTRON RADIATION-DAMAGE OF HIGH-PURITY GERMANIUM DETECTORS [J].

KRANER, HW ;

PEHL, RH ;

HALLER, EE .

[8]

MASHOVETS TV, 1974, LATTICE DEFECTS SEMI, P103

[9]

MCCABEE HD, 1966, THESIS U CALIFORNIA

[10]

OTTAVIANI G, 1974, J APPL PHYS, V45