GATE-VOLTAGE-DEPENDENT TRANSPORT MEASUREMENTS ON HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

被引：7

作者：

PROST, W

BROCKERHOFF, W

HEIME, K

PLOOG, K

SCHLAPP, W

WEIMANN, G

MORKOC, H

机构：

[1] DEUTSCH BUNDESPOST,FORSCH INST,D-6100 DARMSTADT,FED REP GER

[2] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[3] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

关键词：

D O I：

10.1109/T-ED.1986.22546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：646 / 650

页数：5

共 16 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[2] DRUMMOND TJ, 1982, APPL PHYS LETT, V41, P272
[3] HEUKEN M, 1985, P ESSDERC AACHEN
[4] MBE GROWTH AND PROPERTIES OF ALGAAS GAAS ALGAAS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION STRUCTURES WITH VERY HIGH CONDUCTIVITY
INOUE, K
SAKAKI, H
YOSHINO, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L767 - L769
[5] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
INOUE, K
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
[6] MAGNETOTRANSCONDUCTANCE MOBILITY MEASUREMENTS OF GAAS-MESFETS
JAY, PR
WALLIS, RH
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 265 - 267
[7] KUHRT F, 1968, HALLGENERATOREN EIGE, P58
[8] LOOK DC, 1985, APPL PHYS LETT, V47
[9] LOOK DC, 1985, J APPL PHYS, V57
[10] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227