BAND-MAPPING OF INP-(100) ALONG THE GAMMA-X-LINE

被引：20

作者：

LODDERS, F ^{[1
]}

WESTHOF, J ^{[1
]}

SCHAEFER, JA ^{[1
]}

HOPFINGER, H ^{[1
]}

GOLDMANN, A ^{[1
]}

WITZEL, S ^{[1
]}

机构：

[1] UNIV OSNABRUCK, FACHBEREICH PHYS, W-4500 OSNABRUCK, GERMANY

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1991年 / 83卷 / 02期

关键词：

D O I：

10.1007/BF01309427

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have prepared InP (100) surfaces from wafer-material by cycles of argon ion sputtering and gentle annealing. From these samples normal-emission photoelectron spectra were recorded using photons in the energy range 10 eV < h-omega < 75 eV. From the results we derive the initial-state band dispersion along the GAMMA-X-line of the 3-dimensional Brillouin zone. Our results are fully consistent with initial-state bands mapped by other authors along the GAMMA-KX-line. From the good agreement we conclude that the quality of the (100)-surfaces as used in our work is at least adequate for bulk band investigations.

引用

页码：263 / 266

页数：4

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