RAMAN-SCATTERING FROM INTERFACE MODES IN GA1-XINXSB/INAS SUPERLATTICES

被引：21

作者：

SELA, I

SAMOSKA, LA

BOLOGNESI, CR

GOSSARD, AC

KROEMER, H

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

[3] UNIV CALIF SANTA BARBARA,DEPT ENGN MAT,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.46.7200

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study we use Raman scattering from Ga1-xInxSb/InAs grown by molecular-beam epitaxy superlattices to identify and study interface modes. Those modes are localized around the interfaces of the superlattices. We identify three types of longitudinal interface modes; two GaAs-like and one InSb-like. The frequency and the Raman activity of those modes are in good agreement with theoretical calculations. In addition, it is shown that the interface modes can be used to identify the interface composition (InSb or GaAs) for a variety of samples grown under controlled shutter sequences.

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页码：7200 / 7203

页数：4

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