STUDIES OF ELECTRONIC-STRUCTURES OF WURTZITE COMPOUNDS GAN, ALN AND STRAINED-LAYER SUPERLATTICES (GA2N2)N(AL2N2)N(001),(N=1,2)

被引：7

作者：

KE, SH ^{[1
]}

HUANG, MC ^{[1
]}

WANG, RZ ^{[1
]}

机构：

[1] XIAMEN UNIV,DEPT PHYS,XIAMEN 361005,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 89卷 / 02期

关键词：

D O I：

10.1016/0038-1098(94)90385-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structures of wurtzite compounds GaN, AlN and strained-layer superlattices (SLS's) (Ga2N2)(n) (AL(2)N(2))(n) (001), (n=1,2) constituted by straining GaN-layer to match the lattice constant of AlN according to the elastic theory are studied (for the first time to the SLS's) with the first-principles LMTO band-structure method. The band offsets in the SLS's are determined by the frozen potential method. The results for the bulk materials are in good agreement with the available experimental data.

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页码：105 / 108

页数：4

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