ROOM-TEMPERATURE X-RAY SPECTROSCOPY WITH A SILICON DIODE DETECTOR AND AN ULTRA-LOW NOISE PREAMPLIFIER

被引：26

作者：

BERTUCCIO, G

PULLIA, A

机构：

[1] Dipartimento di Elettronicac Informazione, Politecnico di Milano P.zza L. Da Vinci, Milano

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/23.322776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An X-ray spectrograph operating at room-temperature has been designed and tested. It consists of a small area (1 mm2) silicon diode detector on a high resistivity bulk and an ultra low noise preamplifier of new conception. A resolution of 61 r.m.s. electron (517 eV FWHM) was measured at 297 K, 34 r.m.s. electrons (288 eV FWHM) at 223 K. The limits and perspectives for room temperature operation of silicon planar diode detectors and related front-end electronics are high-lighted.

引用

页码：1704 / 1709

页数：6

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