NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS

被引：41

作者：

KAWAGUCHI, Y ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90639-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：505 / 509

页数：5

共 13 条

[1] INTERACTION EFFECTS IN DISORDERED FERMI SYSTEMS IN 2 DIMENSIONS [J].

ALTSHULER, BL ;

ARONOV, AG ;

LEE, PA .

PHYSICAL REVIEW LETTERS, 1980, 44 (19) :1288-1291

[2]

ANDO T, 1980, SURF SCI, V98, P327, DOI 10.1016/0039-6028(80)90513-0

[3] INTERACTION-INDUCED TRANSITION AT LOW-DENSITIES IN SILICON INVERSION LAYER [J].

BLOSS, WL ;

SHAM, LJ ;

VINTER, V .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1529-1532

[4] THEORY OF WEAKLY LOCALIZED REGIME OF THE ANDERSON LOCALIZATION IN 2-DIMENSIONS [J].

FUKUYAMA, H .

SURFACE SCIENCE, 1982, 113 (1-3) :489-504

[5] EFFECTS OF INTER-VALLEY IMPURITY SCATTERING ON THE NON-METALLIC BEHAVIOR IN TWO-DIMENSIONAL SYSTEMS [J].

FUKUYAMA, H .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 49 (02) :649-651

[6]

HIKAMI S, 1980, PROG THEOR PHYS, V63, P707, DOI 10.1143/PTP.63.707

[7] NEGATIVE MAGNETORESISTANCE IN SILICON(100) MOS INVERSION-LAYERS [J].

KAWAGUCHI, Y ;

KAWAJI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 48 (02) :699-700

[8]

Kawaguchi Y., 1980, Journal of the Physical Society of Japan, V49, P983

[9]

KAWAGUCHI Y, UNPUB

[10]

Nakamura K., UNPUB

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