NEGATIVE MAGNETORESISTANCE IN ANDERSON LOCALIZATION OF SI MOS INVERSION-LAYERS

被引:41
作者
KAWAGUCHI, Y [1 ]
KAWAJI, S [1 ]
机构
[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN
关键词
D O I
10.1016/0039-6028(82)90639-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:505 / 509
页数:5
相关论文
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