EFFECTS OF TAILING OF DENSITY OF STATE ON THE MOBILITY OF SI-MOSFETS AT LOW-TEMPERATURES - A PROPOSAL FOR THE METHOD OF CHARACTERIZATION OF SI-SIO2 INTERFACES

被引：5

作者：

YAGI, A ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期

关键词：

D O I：

10.1143/JJAP.20.909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：909 / 915

页数：7

共 11 条

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