RAMAN-SCATTERING STUDY OF ION-IMPLANTATION PRODUCED DAMAGE IN CU2O

被引：123

作者：

POWELL, D

COMPAAN, A

MACDONALD, JR

FORMAN, RA

机构：

[1] KANSAS STATE UNIV,DEPT PHYS,MANHATTAN,KS 66506

[2] NBS,WASHINGTON,DC 20013

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1103/PhysRevB.12.20

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：20 / 25

页数：6

共 21 条

[1] THEORY OF RESONANT RAMAN SCATTERING IN CRYSTALS - GENERALIZED BARE-EXCITON APPROACH
BENDOW, B
BIRMAN, JL
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 569 - &
[2] GROWTH OF SINGLE CRYSTAL CUPROUS OXIDE
BROWER, WS
PARKER, HS
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) : 227 - &
[3] IMPURITY-INDUCED RAMAN-SCATTERING IN SRF2 AND BAF2
CHASE, LL
KUHNER, D
BRON, WE
[J]. PHYSICAL REVIEW B, 1973, 7 (08): : 3892 - 3902
[4] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON
CHERLOW, JM
AGGARWAL, RL
LAX, B
[J]. PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560
[5] RESONANT QUADRUPOLE-DIPOLE RAMAN-SCATTERING AT S1 YELLOW EXCITON IN CU2O
COMPAAN, A
CUMMINS, HZ
[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (01) : 41 - 44
[6] SURFACE DAMAGE EFFECTS ON ALLOWED AND FORBIDDEN PHONON RAMAN-SCATTERING IN CUPROUS-OXIDE
COMPAAN, A
[J]. SOLID STATE COMMUNICATIONS, 1975, 16 (03) : 293 - 296
[7] ETUDE SPECTROPHOTOMETRIQUE DE LABSORPTION BLEUE ET VIOLETTE DE CU2O
DAUNOIS, A
DEISS, JL
MEYER, B
[J]. JOURNAL DE PHYSIQUE, 1966, 27 (3-4): : 142 - &
[8] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING
GIBBONS, JF
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &
[9] HARLEY RT, 1971, PHYS REV B, V3
[10] JOHNSON WS, 1969, PROJECTED RANGE STAT