EFFECT OF INJECTION LEVEL ON CARRIER LIFETIME IN NEUTRON-IRRADIATED GERMANIUM

被引：9

作者：

GERMANO, CA

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 06期

关键词：

D O I：

10.1109/TNS.1996.4324345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：47 / +

页数：1

共 10 条

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CURTIS, OL ;

CRAWFORD, JH .

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[2] MONOENERGETIC NEUTRON IRRADIATION OF GERMANIUM [J].

CURTIS, OL ;

CLELAND, JW .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :423-427

[3] EFFECT OF IRRADIATION ON THE HOLE LIFETIME OF N-TYPE GERMANIUM [J].

CURTIS, OL ;

CLELAND, JW ;

CRAWFORD, JH ;

PIGG, JC .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (10) :1161-1165

[4] EXPLANATION FOR DISCREPANCY IN RECOMBINATION LEVEL POSITIONS IN IRRADIATED N-TYPE GE REPORTED BY VARIOUS OBSERVERS [J].

CURTIS, OL .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :2094-&

[5]

LOFERSKI JJ, 1959, J APPL PHYS, V30, P1181, DOI 10.1063/1.1735289

[6] THE EFFECTS OF NEUTRON IRRADIATION ON GERMANIUM AND SILICON [J].

MESSENGER, GC ;

SPRATT, JP .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :1038-1044

[7] DISPLACEMENT DAMAGE IN SILICON AND GERMANIUM TRANSISTORS [J].

MESSENGER, GC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (02) :53-+

[8]

SHARENDO LG, 1963, SOV PHYS-SOL STATE, V4, P1565

[9]

VANDONG N, 1959, J ELECT CONT, V7, P275

[10]

VANLINT VAJ, 1965, RADIATION DAMAGE SEM, P417

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