2-TERMINAL CONDUCTANCE OF THE QUANTIZED HALL RESISTOR

被引：16

作者：

POWELL, TG ^{[1
]}

DEAN, CC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] GEC PLC,HIRST RES CTR,WEMBLEY,MIDDX,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 13期

关键词：

D O I：

10.1088/0022-3719/17/13/006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L359 / L364

页数：6

共 10 条

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[6]

SYPHERS DA, 1984, UNPUB SURF SCI

[7] ZERO-RESISTANCE STATE OF TWO-DIMENSIONAL ELECTRONS IN A QUANTIZING MAGNETIC-FIELD [J].

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STORMER, HL ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1982, 25 (02) :1405-1407

[8]

VONKLITZING K, 1980, PHYS REV LETT, V45, P494, DOI 10.1103/PhysRevLett.45.494

[9] HALL CONDUCTIVITY IN N-TYPE SILICON INVERSION-LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

WAKABAYASHI, J ;

KAWAJI, S .

SURFACE SCIENCE, 1980, 98 (1-3) :299-307

[10] HALL-EFFECT IN SILICON MOS INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

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KAWAJI, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (06) :1839-1849

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