HIGH-SPEED PERFORMANCE OF INGAAS PHOTO-DIODES

被引:2
作者
DIADIUK, V [1 ]
GROVES, SH [1 ]
TSANG, DZ [1 ]
WALPOLE, JN [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1109/T-ED.1983.21405
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1608 / 1609
页数:2
相关论文
共 2 条
[1]   N+-INP GROWTH ON INGAAS BY LIQUID-PHASE EPITAXY [J].
GROVES, SH ;
PLONKO, MC .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1003-1004
[2]   Q-SWITCHED SEMICONDUCTOR DIODE-LASERS [J].
TSANG, DZ ;
WALPOLE, JN .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (02) :145-156