MISFIT DISLOCATION-STRUCTURES AT MBE-GROWN SI1-XGEX/SI INTERFACES

被引：27

作者：

FUKUDA, Y

KOHAMA, Y

SEKI, M

OHMACHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1593 / 1598

页数：6

共 30 条

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[8] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS
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[9] HIRSH PB, 1965, ELECTRON MICROS, P176
[10] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

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