SINGLE-DRIFT FLAT-PROFILE GAAS IMPATT DIODES AT 90 GHZ

被引：10

作者：

EISELE, H

FREYER, J

机构：

[1] Technische Univ Muenchen, Munich, West Ger, Technische Univ Muenchen, Munich, West Ger

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

D O I：

10.1049/el:19860156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：224 / 225

页数：2

共 9 条

[1] GAAS IMPATT DIODES FOR 60 GHZ [J].

ADLERSTEIN, MG .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :97-98

[2]

BAYRAKTAROGLOU B, 1983, ELECTRON LETT, V19, P328

[3] GAAS READ-TYPE IMPATT DIODE FOR 130 GHZ CW OPERATION [J].

CHANG, K ;

KUNG, JK ;

ASHER, PG ;

HAYASHIBARA, GM ;

YING, RS .

ELECTRONICS LETTERS, 1981, 17 (13) :471-473

[4]

HAUGLAND EJ, 1984, MICROWAVES RF, V23, P100

[5] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].

HOUSTON, PA ;

EVANS, AGR .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :197-204

[6] HIGH-EFFICIENCY V-BAND GAAS IMPATT DIODES [J].

MA, YE ;

BENKO, E ;

TRINH, T ;

ERICKSON, LP ;

MATTORD, TJ .

ELECTRONICS LETTERS, 1984, 20 (05) :212-214

[7] ELECTRON VELOCITY IN SI AND GAAS AT VERY HIGH ELECTRIC-FIELDS [J].

SMITH, PM ;

INOUE, M ;

FREY, J .

APPLIED PHYSICS LETTERS, 1980, 37 (09) :797-798

[8] MBE GAAS IMPATT DIODES WITH REDUCED DRIFT REGION FOR MM-WAVE FREQUENCIES [J].

ZHANG, X ;

FREYER, J ;

WEIMANN, G ;

SCHLAPP, W .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1984, 131 (06) :203-206

[9] HIGH-EFFICIENCY SINGLE-DRIFT GAAS IMPATT DIODES FOR 72 GHZ [J].

ZHANG, X ;

FREYER, J .

ELECTRONICS LETTERS, 1984, 20 (18) :752-754

← 1 →