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KINEMATICAL ANALYSIS OF RHEED PATTERNS FROM A HYDROGEN ADSORBED SI(111) DELTA-7 X 7 SURFACE

被引：13
作者：
HORIO, Y
ICHIMIYA, A
KOHMOTO, S
NAKAHARA, H
机构：
[1] Nagoya Univ, Nagoya, Japan
来源：
SURFACE SCIENCE | 1991年 / 257卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(91)90789-U
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A Si(111)delta-7 x 7 surface appears by the adsorption of hydrogen atoms or some alkaline metals etc. on the clean Si(111)7 x 7 surface at room temperature. In this paper, hydrogen adsorbed delta-7 x 7 RHEED patterns have been kinematically analyzed based on the dimer-adatom-stacking fault (DAS) structure taking account of a change of the bonding state of the Si adatoms induced by hydrogen adsorption. Intensities of the experimental RHEED patterns agree well with the calculated ones for a model with randomly distributed SiH3 clusters on the dimer-stacking fault (DSF) framework, which preserves the periodicity of the delta-7 x 7 RHEED pattern.
引用
收藏
页码：167 / 174
页数：8
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