VERY-LOW CHIRPING OF INGAAS-INGAALAS MQW DFB BRS LASERS UNDER 10 GBIT/S MODULATION

被引:7
作者
BLEZ, M
MATHOORASING, D
KAZMIERSKI, C
QUILLEC, M
GILLERON, M
LANDREAU, J
NAKAJIMA, H
机构
[1] Centre National d'Etudes des Telecommunications, Centre Paris B—Laboratoire de Bagneux, France Telecom
关键词
D O I
10.1109/3.234420
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ability of the InGaAs/InGaAlAs MQW system for ultralow chirp operation under 10 Gbits/s operation is experimentally demonstrated. The MQW active layer has been grown by a solid-source MBE method. Two MOCVD regrowths were used to perform the DFB BRS lasers fabrication. DFB BRS lasers with good static and spectral performance have been obtained. Under 10 Gbits/s modulation those lasers exhibited a chirp value as low as 0.11 nm at -20 dB which is attributed to an extremely small phase-amplitude coupling coefficient 1.8. an analysis of the AM and FM modulated laser field under digital pseudorandom signal confirms the observed spectra and shows a possibility of an optimum spectrum width for lasers with small chirping.
引用
收藏
页码:1676 / 1681
页数:6
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