HIGH-SPEED ULTRALOW CHIRP 1.55-MU-M MBE GROWN GAINAS ALGAINAS MQW DFB LASERS

被引：16

作者：

BLEZ, M

KAZMIERSKI, C

MATHOORASING, D

QUILLEC, M

GILLERON, M

NAKAJIMA, H

SERMAGE, B

机构：

[1] Centre National d’Etudes des Telecommunications, Laboratoire de Bagneux, 92225 Bagneux

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 11期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The successful realisation of high speed MBE grown InGaAs/InGaAlAs MQW active layer DFB BRS lasers is reported, with threshold currents as low as 9.5 mA, and bandwidths up to 9 GHz. The devices operate at 10 Gbit/s, with a chirp value lower than 0.1 nm; a very small alpha-parameter value of 1.8 was measured above threshold.

引用

页码：1040 / 1042

页数：3

共 8 条

[1] 1ST DFB GRIN-SCH GAINAS/AIGAINAS 1.55-MU-M MBE MQW ACTIVE LAYER BURIED RIDGE STRUCTURE LASERS [J].