PD-INP SCHOTTKY DIODE HYDROGEN SENSORS

被引：45

作者：

YOUSUF, M ^{[1
]}

KULIYEV, B ^{[1
]}

LALEVIC, B ^{[1
]}

POTEAT, TL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1016/0038-1101(82)90205-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：753 / 758

页数：6

共 12 条

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[2] CHEUNG PW, 1978, THEORY DESIGN BIOMED
[3] ADSORPTION OF HYDROGEN ON PALLADIUM SINGLE-CRYSTAL SURFACES
CONRAD, H
ERTL, G
LATTA, EE
[J]. SURFACE SCIENCE, 1974, 41 (02) : 435 - 446
[4] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES
ITO, K
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 345 - 352
[5] KERAMATI B, 1978, MAR P INT TOP C YORK
[6] HYDROGEN-SENSITIVE MOS FIELD-EFFECT TRANSISTOR
LUNDSTROEM, I
SHIVARAMAN, S
SVENSSON, C
LUNDKVIST, L
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (02) : 55 - 57
[7] LUNDSTROM I, 1975, J APPL PHYS, V46, P3876
[8] POTEAT T, 1981, THESIS RUTGERS U
[9] PD-MOS HYDROGEN AND HYDROCARBON SENSOR DEVICE
POTEAT, TL
LALEVIC, B
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 82 - 84
[10] POTEAT TL, 1981, UNPUB APR P INT C HY