DEPOSITION OF HIGH-QUALITY SOL-GEL OXIDES ON SILICON

被引：16

作者：

WARREN, WL ^{[1
]}

LENAHAN, PM ^{[1
]}

BRINKER, CJ ^{[1
]}

ASHLEY, CS ^{[1
]}

REED, ST ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 05期

关键词：

interface trap densities; oxides on Si; Sol-gel;

D O I：

10.1007/BF02658001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high quality sol-gel derived silicate and aluminoborosilicate thin films deposited on silicon substrates. From capacitance vs voltage measurements we observe low interface trap densities (<1011/cm2eV) and very low densities of slow interface state (<1010/cm2) in most films investigated. We have been able to make significant improvements over previous sol-gel derived oxides on silicon by controlling some of the key factors which effect the structure of the sol-gel derived thin films. © 1990 The Mineral, Metal & Materials Society, Inc.

引用

页码：425 / 428

页数：4

共 22 条

[1] HYDROLYSIS OF ETHYL SILICATE [J].