HOT-ELECTRON SPECTROSCOPY OF GAAS

被引：15

作者：

LEVI, AFJ ^{[1
]}

HAYES, JR ^{[1
]}

PLATZMAN, PM ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL COMMUN RES,MURRAY HILL,NJ 07974

来源：

PHYSICA B & C | 1985年 / 134卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90391-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：480 / 486

页数：7

共 10 条

[1] CASEY HC, 1978, HETEROSTRUCTURE LA A, P193
[2] CONWELL EM, 1967, ADV RES APPLICATIONS, V9
[3] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[4] HOT-ELECTRON SPECTROSCOPY
HAYES, JR
LEVI, AFJ
WIEGMANN, W
[J]. ELECTRONICS LETTERS, 1984, 20 (21) : 851 - 852
[5] HOT-ELECTRON SPECTROSCOPY OF GAAS
HAYES, JR
LEVI, AFJ
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572
[6] ELECTRON-SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORS
KIM, ME
DAS, A
SENTURIA, SD
[J]. PHYSICAL REVIEW B, 1978, 18 (12): : 6890 - 6899
[7] MALIK RJ, 1980, ELECTRON LETT, V16, P837
[8] Pines D., 1966, THEORY QUANTUM LIQUI
[9] RADIATIVE RECOMBINATION FROM PHOTOEXCITED HOT CARRIERS IN GAAS
SHAH, J
LEITE, RCC
[J]. PHYSICAL REVIEW LETTERS, 1969, 22 (24) : 1304 - &
[10] HOT ELECTRONS IN GERMANIUM AND OHMS LAW
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04): : 990 - 1034