EVOLUTION OF THE IN-GAP STATE IN HIGH-TC CUPRATES

被引:67
作者
OHTA, Y
TSUTSUI, K
KOSHIBAE, W
SHIMOZATO, T
MAEKAWA, S
机构
[1] Department of Applied Physics, Nagoya University
来源
PHYSICAL REVIEW B | 1992年 / 46卷 / 21期
关键词
D O I
10.1103/PhysRevB.46.14022
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An exact diagonalization technique on small lattices is used to calculate the single-particle spectral function A (k,omega) for one- and three-band Hubbard models at various parameter values and doping rates, thereby examining the low-energy electronic structure (or in-gap state) of the doped CuO2 plane in high-T(c) superconducting cuprates. It is illustrated that, by carrier doping, the dispersive state of the charge excitation gap at half filling undergoes a strongly momentum-dependent spectral-weight transfer, and evolves into the new state with a free-electron-like dispersion that forms the in-gap state characteristic of a large Fermi surface consistent with Luttinger's sum rule. The quasiparticlelike band narrowing observed is shown to depend sensitively on the parameter values and doping rate.
引用
收藏
页码:14022 / 14033
页数:12
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