INTERMIXING AT AU-IN INTERFACES AS STUDIED BY PHOTOELECTRON-SPECTROSCOPY

被引：12

作者：

BOYEN, HG ^{[1
]}

INDLEKOFER, G ^{[1
]}

GANTNER, G ^{[1
]}

STUPP, H ^{[1
]}

COSSYFAVRE, A ^{[1
]}

OELHAFEN, P ^{[1
]}

机构：

[1] UNIV BASEL,INST PHYS,CH-4056 BASEL,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.51.17096

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interface reactions were observed by means of synchrotron-radiation-induced photoemission during the preparation of Au-In bilayers under UHV conditions at 77 K. These reactions lead to thin amorphous layers with tunable Au content, spanning the same range of compositions as found for vapor-quenched amorphous AuxIn100-x alloys. Most importantly, a significant decrease in the electronic density of states towards the Fermi level is observed in the intermixed phase, giving evidence for a strong mutual influence between the conduction electrons and the ionic structure during layer growth. © 1995 The American Physical Society.

引用

页码：17096 / 17099

页数：4

共 18 条

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