ELECTRICAL PROPERTIES OF CUGAS2

[1] Bloem J., 1958, PHILIPS RES REP, V13, P167

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 541 - &

[4] GEBALLE TH, 1960, SEMICONDUCTORS

[5] KROGER FA, 1964, CHEMISTRY IMPERFECT

[6] CONCENTRATION AND TEMPERATURE DEPENDENCE OF IMPURITY-TO-BAND ACTIVATION-ENERGIES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 408 - +

[7] PRECIPITATION OF TE AND PB IN PBTE CRYSTALS [J]. PHYSICAL REVIEW, 1962, 126 (02): : 509 - &

[8] STRAUSS AI, 1968, J PHYSIQUE, V29, pC4

[9] WAGNER S, 1972, APPL PHYS LETT, V22, P351

[1] Bloem J., 1958, PHILIPS RES REP, V13, P167

[2] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +

[3] SHALLOW ACCEPTOR STATES IN ZNTE AND CDTE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 541 - &

[4] GEBALLE TH, 1960, SEMICONDUCTORS

[5] KROGER FA, 1964, CHEMISTRY IMPERFECT

[6] CONCENTRATION AND TEMPERATURE DEPENDENCE OF IMPURITY-TO-BAND ACTIVATION-ENERGIES [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 408 - +

[7] PRECIPITATION OF TE AND PB IN PBTE CRYSTALS [J]. PHYSICAL REVIEW, 1962, 126 (02): : 509 - &

[8] STRAUSS AI, 1968, J PHYSIQUE, V29, pC4

[9] WAGNER S, 1972, APPL PHYS LETT, V22, P351