DARK-FIELD ELECTRON-MICROSCOPY OF DISSOCIATED DISLOCATIONS AND SURFACE STEPS IN SILICON USING FORBIDDEN REFLECTIONS

被引：26

作者：

OURMAZD, A ^{[1
]}

ANSTIS, GR ^{[1
]}

HIRSCH, PB ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD OX1 3PH,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1983年 / 48卷 / 01期

关键词：

D O I：

10.1080/01418618308234892

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 153

页数：15

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