THE EPITAXIAL-GROWTH OF CU ON SI(111)7X7 - A RHEED STUDY

被引：23

作者：

BOOTSMA, TIM

HIBMA, T

机构：

[1] Department of Chemical Physics, the University of Groningen, 9747 AG Groningen

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

AUGER ELECTRON DIFFRACTION; COMPOUND FORMATION; COPPER; EPITAXY; GROWTH; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACE; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); SILICIDES; SILICON; SINGLE CRYSTAL EPITAXY;

D O I：

10.1016/0039-6028(95)00359-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated the morphological and structural changes that occur during the growth of Cu on Si(111)(7 x 7) at different substrate temperatures using reflection high energy electron diffraction (RHEED). For temperatures up to 100 degrees C Cu grows in a layer-by-layer like fashion as indicated by the observation of RHEED intensity oscillations. The interface is intermixed, but only for growth above -50 degrees C we found evidence for the formation of eta-Cu3Si. Above 150 degrees C the oscillations disappear and the growth proceeds in the Stranski-Krastanov mode producing a very rough surface.

引用

页码：636 / 640

页数：5

共 12 条

[1] THE COPPER SILICON INTERFACE - COMPOSITION AND INTERDIFFUSION [J].