SURFACE CHARGE ON SILICON INDUCED BY AMBIENT IONISATION

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] BUCK TM, 1964, IEEE T NUCLEAR SCIEN, VNS11, P294

[4] INTERNAL FIELD EMISSION ON GERMANIUM SURFACE AT AC FIELD EFFECT [J]. PHYSICA STATUS SOLIDI, 1963, 3 (08): : 1318 - 1332

[5] DWIGHT HB, 1961, MATHEMATICAL TABLES

[6] ENGELL HJ, 1962, Z ELEKTROCHEM, V66, P617

[7] ESTRUP PJ, UNPUBLISHED RESULTS

[8] ESTRUP PJ, TO BE PUBLISHED

[9] RELAXATION TIME OF SURFACE STATES ON GERMANIUM [J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540

[10] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720

[1] OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (10) : 619 - 622

[2] EFFECTS OF CERTAIN CHEMICAL TREATMENTS AND AMBIENT ATMOSPHERES ON SURFACE PROPERTIES OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : 709 - 714

[3] BUCK TM, 1964, IEEE T NUCLEAR SCIEN, VNS11, P294

[4] INTERNAL FIELD EMISSION ON GERMANIUM SURFACE AT AC FIELD EFFECT [J]. PHYSICA STATUS SOLIDI, 1963, 3 (08): : 1318 - 1332

[5] DWIGHT HB, 1961, MATHEMATICAL TABLES

[6] ENGELL HJ, 1962, Z ELEKTROCHEM, V66, P617

[7] ESTRUP PJ, UNPUBLISHED RESULTS

[8] ESTRUP PJ, TO BE PUBLISHED

[9] RELAXATION TIME OF SURFACE STATES ON GERMANIUM [J]. PHYSICAL REVIEW, 1956, 103 (03): : 534 - 540

[10] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720