GENERATION OF PB CENTERS BY HIGH ELECTRIC-FIELDS - THERMOCHEMICAL EFFECTS

被引：34

作者：

GERARDI, GJ ^{[1
]}

POINDEXTER, EH ^{[1
]}

CAPLAN, PJ ^{[1
]}

HARMATZ, M ^{[1
]}

BUCHWALD, WR ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1149/1.2097511

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2609 / 2614

页数：6

共 32 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR
AUBUCHON, KG
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) : 117 - +
[2] BELL RP, 1980, TUNNEL EFFECT CHEM, P163
[3] BOCKRIS JO, 1979, QUANTUM ELECTROCHEMI, P322
[4] BORELLO E, 1967, J PHYS CHEM-US, V71, P938
[5] ELECTRON-SPIN-RESONANCE STUDIES OF THERMALLY OXIDIZED SILICON-WAFERS
BRUNSTROM, C
SVENSSON, C
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 399 - 404
[6] Caplan P. J., 1987, Science and Technology of Microfabrication Symposium, P241
[7] ESR CENTERS, INTERFACE STATES, AND OXIDE FIXED CHARGE IN THERMALLY OXIDIZED SILICON WAFERS
CAPLAN, PJ
POINDEXTER, EH
DEAL, BE
RAZOUK, RR
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5847 - 5854
[8] CONWAY BE, 1965, THEORY PRINCIPLES EL, P106
[9] Cotton F. A., 1972, ADV INORG CHEM RAD, P163
[10] 2 DISTINCT INTERFACE TRAP PEAKS IN RADIATION-DAMAGED METAL/SIO2/SI STRUCTURES
DASILVA, EF
NISHIOKA, Y
MA, TP
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 270 - 272