FUNDAMENTALS OF PULSED LASER ANNEALING

被引：1

作者：

KURZ, H

机构：

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1983年 / 23卷

关键词：

D O I：

10.1007/BFb0107972

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：115 / 140

页数：26

共 60 条

[1]

[Anonymous], 1982, LASER ANNEALING SEMI

[2]

[Anonymous], SEMICOND SEMIMET

[3]

APPLETON BR, 1982, LASER ELECTRON BEAM, P49

[4] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

AUSTON, DH ;

SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[5] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[6] PHONON-SPECTRUM OF A MODEL OF ELECTRONICALLY EXCITED SILICON [J].

BISWAS, R ;

AMBEGAOKAR, V .

PHYSICAL REVIEW B, 1982, 26 (04) :1980-1988

[7] EFFECT OF ELECTRON-HOLE PAIRS ON THE MELTING OF SILICON [J].

BOK, J .

PHYSICS LETTERS A, 1981, 84 (08) :448-450

[8]

BORN M, 1959, PRINCIPLES OPTICS, P627

[9]

Brown W. L., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P1

[10] INSTABILITY OF THE ELECTRON-HOLE PLASMA IN SILICON [J].

COMBESCOT, M ;

BOK, J .

PHYSICAL REVIEW LETTERS, 1982, 48 (20) :1413-1416

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