INTERFACE STATES AND INTERFACE DISORDER IN SI-SIO2 SYSTEM

被引：41

作者：

REVESZ, AG

ZAININGER, KH

EVANS, RJ

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(67)90108-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：197 / +

页数：1

共 27 条

BALK, P ;

BURKHARD.PJ ;

GREGOR, LV .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2133-&

[2]

BALK P, 1965, MAY M EL SOC SAN FRA

[3] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM [J].

BROWN, WL .

PHYSICAL REVIEW, 1953, 91 (03) :518-527

[4]

DELORD JF, 1965, B AM PHYS SOC, V10, P546

GRAY, PV ;

BROWN, DM .

[6]

Hetherington G, 1962, PHYS CHEM GLASSES-B, V3, P129

[7]

HURD RM, 1963, ANN NY ACAD SCI, V101, P876

[8]

KOOI E, 1965, PHILIPS RES REP, V20, P578

[9] ON THE LOGARITHMIC RATE LAW IN CHEMISORPTION AND OXIDATION [J].

LANDSBERG, PT .

[10]

LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35