INTERFERENCE PHOTOELECTROMAGNETIC EFFECT IN GRADED-GAP SEMICONDUCTORS

被引：6

作者：

JOZWIKOWSKI, K ^{[1
]}

NOWAK, M ^{[1
]}

PIOTROWSKI, J ^{[1
]}

机构：

[1] SILESIA TECH UNIV,INST PHYS,PL-44100 GLIWICE,POLAND

来源：

INFRARED PHYSICS | 1984年 / 24卷 / 04期

关键词：

D O I：

10.1016/0020-0891(84)90028-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：371 / 380

页数：10

共 24 条

[1] ABSORPTION CONSTANT OF PB1-XSNXTE AND HG1-XCDXTE ALLOYS [J].

ANDERSON, WW .

INFRARED PHYSICS, 1980, 20 (06) :363-372

[2] RESTSTRAHLEN SPECTRA OF HGTE AND CDXHG1-XTE [J].

BAARS, J ;

SORGER, F .

SOLID STATE COMMUNICATIONS, 1972, 10 (09) :875-&

[3]

BAKER M, 1978, SOLID ST ELECTRON, V21, P1475

[4] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[5]

BECLA P, 1978, OPT APPL, V8, P21

[6] COMPARISON OF THE DOMINANT AUGER TRANSITIONS IN P-TYPE (HG,CD)TE [J].

CASSELMAN, TN ;

PETERSEN, PE .

SOLID STATE COMMUNICATIONS, 1980, 33 (06) :615-619

[7] PHOTOMAGNETOELECTRIC EFFECT IN GRADED BAND-GAP SEMICONDUCTORS [J].

CHATTOPADHYAYA, SK ;

MATHUR, VK .

PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (10) :3390-+

[8] CARRIER DISTRIBUTION IN GRADED-BAND-GAP SEMICONDUCTORS UNDER ASYMMETRIC BAND-EDGE GRADIENTS [J].

CHATTOPADHYAYA, SK ;

MATHUR, VK .

PHYSICAL REVIEW B, 1974, 9 (08) :3517-3523

[9] TRANSPORT OF PHOTOCARRIERS IN CDXHG1-XTE GRADED-GAP STRUCTURES [J].

COHENSOLAL, G ;

MARFAING, Y .

SOLID-STATE ELECTRONICS, 1968, 11 (12) :1131-+

[10] PHOTOELECTROMAGNETIC EFFECT IN CDXHG1-XTE GRADED-GAP STRUCTURES [J].

GENZOW, D ;

JOZWIKOWSKA, A ;

JOZWIKOWSKI, K ;

NIEDZIELA, T ;

PIOTROWSKI, J .

INFRARED PHYSICS, 1984, 24 (01) :21-24

← 1 2 3 →